The Silicon Carbide material is used
in many commercial applications including electronic systems, abrasive
materials, cutting tools, body armors, automobile brakes, and lighting
applications. The other major main use of Silicon Carbide material is in the power
semiconductor devices such as SiC diodes, MOSFETs, transistors, and JEFTs.
These SiC devices are used in power devices for their distinct properties such
as high temperature, high voltage, and high frequency. The silicon carbide semiconductors
are proved to be useful over other semiconductors such as silicon materials.
There is a constant change in the electronics market because of technological
advancements and innovation. The power electronics devices market is increasing
at a fast pace.
The silicon carbide based
semiconductor devices are widely used in industrial applications. The silicon carbide
devices provide operating reliability under high voltage, frequency, and high
temperature applications. The industrial application of SiC devices includes
industrial and commercial motor drives, electro-mechanical computing and high
temperature electronics and sensors. The various SiC devices such as power
modules, Schottky diodes, MOSFETs and BJT (Bipolar junction transistors) are
used in industrial applications. The use of silicon carbide devices in industrial
applications is high in APAC. The development of the industrial and power
sector in the APAC region is considered to be the main reason for the growth of
SiC in APAC’s. The APAC region is projected to grow with a higher growth rate
compared to North America, Europe, and other regions.
The power sector in APAC is expected
to create huge demand for silicon carbide based semiconductor devices. With the
development of various projects related to power, there will be an increased
demand for silicon carbide. Many power and smart grid projects are expected
from Asian countries such as China, India, and Thailand. The implementation of
solar power project in countries such as China and Japan will further boost the
demand of silicon carbide based semiconductor. Due to the initiative taken by the
Government of Japan in relation to solar power project, there is a huge
requirement of solar power panel. These panels along with solar invertor
require silicon carbide material. Thus, in APAC,
implementation of silicon carbide in semiconductor in power sector will lead
the market.
The Silicon Carbide (SiC) in Semiconductor Market expected to reach $3182.89 million by 2020 growing at a CAGR of 42.03% from 2014 to 2020.
The players involved in the development of silicon carbide based semiconductor market includes CREE Incorporated (U.S.), Fairchild Semiconductor International Inc. (U.S.), Genesic Semiconductor Inc. (U.S.), Infineon Technologies AG (Germany), Microsemi Corporation (U.S.), Norstel AB (Sweden), Renesas Electronics Corporation (Japan), ROHM Co. Ltd. (Japan), STMicroelectronics N.V (Switzerland), and Toshiba Corporation (Japan).
